2008.9-2013.6, 华南理工大学，材料物理与化学, 博士
2004.9-2008.6, 西南大学, 材料物理, 学士

2023.8-至今，南方科技大学，研究教授、研究员，博士生导师；
2019.4-2023.7，南方科技大学，研究副教授、副研究员，硕士生导师;
2013.7- 2019.1, 东莞市中镓半导体科技有限公司, 历任研发中心高级工程师、事业部副经理、研发部经理和制造部主任。

GaN功率器件及单片集成电路
GaN射频器件
GaN智能传感系统

2022，获得中国发明协会颁发的发明创业奖创新奖二等奖
2021，深圳市高层次人才
2021，南方科技大学“七一”表彰“优秀党务工作者”
2021，南方科技大学工学院“优秀共产党员”称号
2019，获得第三代半导体产业技术创新战略联盟“年度贡献奖”

1、Yi Deng, Yi Zhang*, Xinyuan Zhang, Yang Jiang, Xi Chen, Yansong Yang, Xin Tong, Yao Cai, Wenjuan Liu, Chengliang Sun, Dashan Shang, Qing Wang*, Hongyu Yu*, Zhongrui Wang*.MEMS Oscillators-Network-Based Ising Machine with Grouping Method. Advanced Science. 2024, 2310096.
2、Yang Jiang, Dingchen Wang, Ning Lin, Shuhui Shi, Yi Zhang, Shaocong Wang, Xi Chen, Hegan Chen, Yinan Lin, Kam Chi Loong, Jia Chen, Yida Li, Renrui Fang, Dashan Shang*, Qing Wang*, Hongyu Yu* and Zhongrui Wang*. Spontaneous Threshold Lowering Neuron using Second-Order Diffusive Memristor for Self-Adaptive Spatial Attention, Advanced Science, 2023, 2301323.
3、Yang Jiang, Shuhui Shi, Shaocong Wang, Fangzhou Du, Peiran Wang, Ning Lin, Wennao Li, Yi Zhang, Leiwei He, Robert Sokolovskij, Jiaqi He, Mujun Li, Dingchen Wang, Xi Chen, Qing Wang*, Hongyu Yu*, and Zhongrui Wang*. In-sensor Reservoir Computing for Gas Pattern Recognition using Pt-AlGaN/GaN HEMTs, Device, 2025, 3(1).
4、Yi Zhang, Zilong Xiong, Lewei He, Yang Jiang, Chenkai Deng, Fangzhou Du, Kangyao Wen, Chuying Tang, Qiaoyu Hu, Mujun Li, Xiaohui Wang, Wenhui Wang, Han Wang, Qing Wang*, Hongyu Yu*, Zhongrui Wang*. Electrically Reconfigurable Surface Acoustic Wave Phase Shifters Based on ZnO TFTs on LiNbO3 Substrate. International Journal of Extreme Manufacturing, 2025, 7(3): 035504.
5、Chu-Ying Tang, Hong-Hao Lu, Ze-Peng Qiao, Yang Jiang, Fang-Zhou Du, Jia-Qi He, Yu-Long Jiang*, Qing Wang*, and Hong-Yu Yu*, Ohmic Contact with a Contact Resistivity of 12 Ω·mm on p-GaN/AlGaN/GaN, IEEE Electron Device Letters, 2022.
6、ChuYing Tang, ChengKai Deng, Chun Fu, Jiaqi He, Fangzhou Du, Peiran Wang, Kangyao Wen,Yi Zhang, Yang Jiang, Nick Tao, Wenyue Yu, Qing Wang*, and HongYu Yu*. Low Contact Resistivity of< 10Ω· mm for Au-Free Ohmic Contact on p-GaN/AlGaN/GaN[J]. IEEE Electron Device Letters, 2024.
7、Yang Jiang, Wenmao Li, Fangzhou Du, Robert Sokolovskij, Yi Zhang, Shuhui Shi, Weiguo Huang, Qing Wang,* Hongyu Yu* and Zhongrui Wang*. Comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses, Journal of Materials Chemistry C, 2023,11, 10121-10148.
8、Yang Jiang, Fangzhou Du, Kangyao Wen, Jiaqi He, Mujun Li, Chuying Tang, Yi Zhang, Zhongrui Wang*, Qing Wang*, Hongyu Yu*.High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer. International Symposium On Power Semiconductor Devices And Ics (ISPSD), 2024.
9、Fangzhou Du, Yang Jiang, Peiran Wang, Kangyao Wen, Chuying Tang, Jiaqi He, Chenkai Deng, Yi Zhang, Mujun Li, Xiaohui Wang, Qiaoyu Hu, Wenyue Yu, Qing Wang*, HongYu Yu*. Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment[J]. Applied Physics Letters, 2025, 126(1).
10、Yang Jiang, FangZhou Du, KangYao Wen, JiaQi He, PeiRan Wang, MuJun Li, ChuYing Tang, Yi Zhang, ZhongRui Wang*, Qing Wang*, HongYu Yu*. Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters[J]. Applied Physics Letters, 2024, 124(24).