2013年，华南理工大学，材料物理与化学，博士
2008年，西南大学，材料物理，学士

2023/8-至今，南方科技大学，研究教授、博士生导师
2019/4-2023/7，南方科技大学，研究副教授、硕士生导师
2013/7-2019/1，东莞市中镓半导体科技有限公司，历任研发中心高级工程师、事业部副经理、研发部经理和制造部主任

GaN功率器件及电源系统
GaN射频器件及PA模块
GaN智能传感系统

2023年，中国发明协会发明创业奖创新奖二等奖（排名第二）
2021年，深圳市高层次人才
2021年，南方科技大学工学院“优秀共产党员”
2019年，第三代半导体产业技术创新战略联盟“年度突出贡献奖”

代表性项目
2024.6-2025.6 低压GaN HEMT器件研究（横向项目），项目主持，排名第一，经费：60万
2023.12-2024.12 陕煤-秦岭基础科学研究五年行动计划（横向项目），项目主持，排名第一，经费：30万
2023.1-2025.12 广东省自然科学基金青年提升项目，项目主持，排名第一，经费：30 万
2022.10-2025.10 深圳市科技创新委员会基础研究面上项目，项目主持，排名第一，经费：30万
2021.8-2024.8， 深圳市基础研究重点项目，项目主持，排名第一，经费：250万。
2021.2-2021.12, 900V耐压GaN功率器件研发，横向项目，项目主持，排名第一，经费：200万。
2018.1-2020.1， 国家自然科学委员会青年科学基金，项目主持，排名第一，经费：24万，已结题。
2014.9-2016.5， 中国博士后科学基金项目，项目主持，排名第一，经费：5万，已结题。
2014.10-2017.9， 广东省公益研究与能力建设专项项目，项目负责人，排名第一，经费：200万，已结题。
2017.7-2020.12，“十三五”国家重点研发计划，项目骨干，子课题副组长，排名第二，经费：200万。
 
代表专利
1.一种GaN器件及其制备方法，授权发明专利
2.一种用于GaN生长的具有隔离保护层的复合衬底制备方法，授权发明专利
3.一种用于GaN生长的低应力状态复合衬底的制备方法，授权发明专利
4.一种用于GaN生长的低应力状态复合衬底，授权发明专利
5.一种GaN基复合衬底的制备方法，授权发明专利
6. 一种提高有机电致发光器件性能的阳极修饰方法，授权发明专利
7.片外大功率输出级最佳直流偏置的自适应校准电路，PCT专利，审中。
8.一种应用于单工通信的可重构高精度模_数，数_模转换器，PCT专利，审中。
9.兰姆波谐振器及其制备方法，PCT专利，审中。
10.一种InAlN射频器件的制备方法，PCT专利，审中。
 
代表性论文:
1.Yang Jiang, Shuhui Shi, Shaocong Wang, Fangzhou Du, Peiran Wang, Ning Lin, Wennao Li, Yi Zhang, Leiwei He, Robert Sokolovskij, Jiaqi He, Mujun Li, Dingchen Wang, Xi Chen, Qing Wang*, Hongyu Yu*, and Zhongrui Wang*. In-sensor Reservoir Computing for Gas Pattern Recognition using Pt-AlGaN/GaN HEMTs. Device (2024).(accepted)
2.Yang Jiang, Fangzhou Du, Kangyao Wen, Jiaqi He, Mujun Li, Chuying Tang, Yi Zhang, Zhongrui Wang*, Qing Wang*, Hongyu Yu*.High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer. International Symposium On Power Semiconductor Devices And Ics (ISPSD), 2024.
3.Yang Jiang , FangZhou Du , KangYao Wen , JiaQi He , PeiRan Wang , MuJun Li , ChuYing Tang , Yi Zhang , ZhongRui Wang *, Qing Wang*, HongYu Yu*.Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters. Applied Physics Letters. 10 June 2024; 124 (24): 242102.
4.Yi Deng, Yi Zhang*, Xinyuan Zhang, Yang Jiang, Xi Chen, Yansong Yang, Xin Tong, Yao Cai, Wenjuan Liu, Chengliang Sun, Dashan Shang, Qing Wang*, Hongyu Yu*, Zhongrui Wang*.MEMS Oscillators-Network-Based Ising Machine with Grouping Method. Advanced Science. 2024, 2310096.
5.JiaQi He, PeiRan Wang, FangZhou Du, KangYao Wen, Yang Jiang, ChuYing Tang, ChenKai Deng, MuJun Li, QiaoYu Hu, Nick Tao, Peng Xiang, Kai Cheng, Qing Wang*, Gang Li, HongYu Yu*. Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench. Applied Physics Letters .25 March 2024; 124 (13): 132104.
6.Chuying Tang, Chun Fu, Yang Jiang, Minghao He, Chenkai Deng, Kangyao Wen, Jiaqi He, Peiran Wang, Fangzhou Du, Yi Zhang, Qiaoyu Hu, Nick Tao, Qing Wang*, HongYu Yu*. Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity. Applied Physics Letters. 28 August 2023; 123 (9): 092104.
7.Chu-Ying Tang, Hong-Hao Lu, Ze-Peng Qiao, Yang Jiang, Fang-Zhou Du, Jia-Qi He, Yu-Long Jiang*, Qing Wang*, and Hong-Yu Yu*, Ohmic Contact with a Contact Resistivity of 12 Ω·mm on p-GaN/AlGaN/GaN, IEEE Electron Device Letters, 2022, 43(9): 1412–1415.
8.Yang Jiang, Dingchen Wang, Ning Lin, Shuhui Shi, Yi Zhang, Shaocong Wang, Xi Chen, Hegan Chen, Yinan Lin, Kam Chi Loong, Jia Chen, Yida Li, Renrui Fang, Dashan Shang*, Qing Wang*, Hongyu Yu* and Zhongrui Wang*. Spontaneous Threshold Lowering Neuron using Second-Order Diffusive Memristor for Self-Adaptive Spatial Attention, Advanced Science, 2023, 2301323.
9.Yang Jiang, Wenmao Li, Fangzhou Du, Robert Sokolovskij, Yi Zhang, Shuhui Shi, Weiguo Huang, Qing Wang,* Hongyu Yu* and Zhongrui Wang*. Comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses, Journal of Materials Chemistry C, 2023,11, 10121-10148
10.Chuying Tang, Chun Fu, Yang Jiang, Minghao He, Chenkai Deng, Kangyao Wen; Jiaqi He, Peiran Wang, Fangzhou Du, Yi Zhang, Qiaoyu Hu; Nick Tao; Qing Wang* and HongYu Yu*，" Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity". Applied Physics Letters， Vol.123, Issue 9, 092104 (2023).
11.Jiaqi He, Kangyao Wen, Peiean Wang, Minghao He, Fangzhou Du, Yang Jiang, Chuying Tang, Nick Tao, Qing Wang*, Gang Li*, and Hongyu Yu*, Interface charge engineering on an in-situ SiNx/AlGaN/GaN platform for normally-off GaN MIS-HEMTs with improved breakdown performance, Applied Physics Letters (2023), 4 September 2023; 123 (10): 103502.
12.Minghao He ; Kangyao Wen; Chenkai Deng; Mujun Li; Yifan Cui; Qing Wang* ; Hongyu Yu*; Kah-Wee Ang*; "Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET," in IEEE Transactions on Electron Devices, vol. 70, no. 6, pp. 3191-3195, June 2023.
13.Chenkai Deng, Wei-Chih Cheng, XiGuang Chen, KangYao Wen, MingHao He, ChuYing Tang, Peiran Wang, Qing Wang*, HongYu Yu*; Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation. Applied Physics Letters. 5 June 2023; 122 (23): 232107.
14.Honghao Lu, Kangyao Wen, Fangzhou Du, Chuying Tang, Wei-Chih Cheng, Bowen Wei, Honglin Li, Qing Wang*, Hongyu Yu*. "Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering", Materials Science in Semiconductor Processing, 154(2023): 107221
15.Yang Jiang, FangZhou Du, JiaQi He, ZePeng Qiao, ChuYing Tang, XinYi Tang, ZhongRui Wang, Qing Wang*, HongYu Yu*，"Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance". Applied Physics Letters. 121, 212105 (2022)
16.Fangzhou Du, Yang Jiang, Zepeng Qiao, Zhanxia Wu, Chuying Tang, Jiaqi He, Guangnan Zhou, Wei-Chih Cheng, Xinyi Tang, Qing Wang*, and Hongyu Yu*. “Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer.” Materials Science in Semiconductor Processing: 143, 2022.
17.Wei-Chih Cheng; Fanming Zeng; Minghao He; Qing Wang*; Mansun Chan; Hongyu Yu*. (2020). Quasi-Normally-Off AlGaN/GaN HEMTs with SiNx Stress Liner and Comb Gate for Power Electronics Applications. IEEE Journal Of The Electron Devices Society,8, 1138-1144.

代表著作：
1. 英文著作: Wang Qing, Yu Gang, Wang Jian, Organic Light-Emitting Materials and Devices (第一章), CRC Press, ISBN-13: 978-1-4398-8223-8, 2015.