2001 年 1 月-2004 年 5 月，获得新加坡国立大学电机与计算机工程系博士学位
1999 年 7 月-2000 年 12 月，获得加拿大多伦多大学材料系硕士学位
1994 年 9 月-1999 年 7 月，获得清华大学材料系学士学位

GaN功率器件与系统集成
CMOS器件与工艺
新型超高密度存储器
电子陶瓷

2022 年，中国发明创业奖创新奖二等奖
2021 年，广东省课程思政改革示范项目（工程学导论）
2016年，南方科技大学杰出科研奖
2012年，英国工程技术学会，会士
2008年，“南洋”助理教授奖
2007年，Tech Sym. VLSI会议亮点文章
2004年，IEEE 电子器件协会博士生奖学金

 部分文章
(1)Yang Jiang, Wenmao Li, Fangzhou Du, Robert Sokolovskij, Yi Zhang, Shuhui Shi, Weiguo Huang, Qing Wang,* Hongyu Yu* and Zhongrui Wang*. "Comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses", Journal of Materials Chemistry C, 2023;
(2)ChenKai Deng, Wei-Chih Cheng, XiGuang Chen, KangYao Wen, MingHao He, ChuYing Tang, PeiRan Wang, Qing Wang*, and Hongyu Yu*. "Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation". Applied Physics Letters, 2023, 122: 232107;
(3)JiaQi He, KangYao Wen, PeiRan Wang, MingHao He, Fangzhou Du, Yang Jiang, ChuYing Tang, Nick Tao, Qing Wang*, Gang Li*, and HongYu Yu*. "Interface charge engineering on an in-situ SiNx/AlGaN/GaN platform for normally-off GaN MIS-HEMTs with improved breakdown performance". Applied Physics Letters, 2023, 123: 103502;
(4)ChuYing Tang, Chun Fu, Yang Jiang, ChenKai Deng, KangYao Wen, JiaQi He, PeiRan Wang, Fangzhou Du, Yi Zhang, Qing Wang*, and HongYu Yu*. "Carrier transport mechanism of Mg/Pt/Au ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity". Applied Physics Letters, 2023, 123: 092104;
(5)JiaQi He, Qing Wang, Guangnan Zhou, Wenmao Li, Yang Jiang, Zepeng Qiao, Chuying Tang, Gang Li, and HongYu Yu*. "Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-Situ SiNx in Regrowth Process". IEEE Electron Device Letters, 2022, 43(4): 529–532;
(6)ChuYing Tang, HongHao Lu, ZePeng Qiao, Yang Jiang, FangZhou Du, JiaQi He, YuLong Jiang, Qing Wang, and HongYu Yu*, "Ohmic Contact with a Contact Resistivity of 12 Ω·mm on p-GaN/AlGaN/GaN". IEEE Electron Device Letters, 2022, 43(9): 1412–1415;
(7)Yang Jiang, FangZhou Du, JiaQi He, ZePeng Qiao, ChuYing Tang, XinYi Tang, ZhongRui Wang, Qing Wang*, HongYu Yu*. "Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance". Applied Physics Letters, 2022, 121: 212105;
(8)Guangnan Zhou, Fanming Zeng, Rongyu Gao, Qing Wang, Kai Cheng, Lingqi Li, Peng Xiang, Fangzhou Du, Guangrui Xia*, and Hongyu Yu*, "p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering". IEEE Transactions on Electron Devices, 2022, 69(5): 2282–2286;
(9)MengYa Fan, Yang Jiang, GaiYing Yang, YuLong Jiang, HongYu Yu*. "Very-Low Resistance Contact to 2D Electron Gas by Annealing Induced Penetration Without Spikes Using TaAl/Au on Non-Recessed i-AlGaN/GaN". IEEE Electron Device Letters, 2020, 41(10):1484-1487;
(10)MengYa Fan, GaiYing Yang, GuangNan Zhou, Yang Jiang, WenMao Li, YuLong Jiang, HongYu Yu*, "Ultra-Low Contact Resistivity of < 0.1 Omega mm for Au-Free TixAly Alloy Contact on Non-Recessed i-AlGaN/GaN". IEEE Electron Device Letters, 2020, 41(1): 143-146.