2014 – 2019 Ph.D., Institute of Microsystems and Nanoelectronics, Delft University of Technology, Delft, the Netherlands.
2011 – 2013 Master of Science, Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, Delft, the Netherlands.
2006 – 2010 Bachelor’s degree, Faculty of Physics, Vilnius University, Vilnius, Lithuania.

2020 – Research assistant professor, Southern University of Science and Technology.
2018 – 2020 Research assistant, Southern University of Science and Technology.
2014 – 2018 Engineer, “State Key Laboratory of Solid State Lighting” Changzhou, China.
2012 – 2013 Intern, “Philips lighting”, in Eindhoven, the Netherlands.
2010 – 2011 Telecommunications Engineer, “Saugumo vizija”, in Vilnius, Lithuania.

Field effect based chemical/gas sensors
Wide bandgap semiconductor devices: sensors, high electron mobility transistors (HEMT), Schottky diodes.
HEMT power device, RF device and sensor design, processing and characterization
Silicon, MEMS and wide bandgap semiconductor fabrication technology

Journal publications:
1.R. Sokolovskij, J. Zhang, H. Zheng, W. Li, Y. Jiang, G. Yang, H. Yu, P. M. Sarro, and G.Q. Zhang, The Impact of Gate Recess on the H2 Detection Properties of Pt-AlGaN/GaN HEMT Sensors, IEEE Sensors Journal, 20, pp. 8947-8955, (2020).
2.J. Sun, R. Sokolovskij, E. Iervolino, Z. Liu, P. M. Sarro, and G.Q. Zhang, Suspended AlGaN/GaN HEMT NO2 Gas Sensor Integrated With Micro-heater, Journal of Microelectromechanical Systems, 28 pp. 997-1004 (2019).
3.J. Sun, R. Sokolovskij, E. Iervolino, F. Santagata, Z. Liu, P. M. Sarro, and G.Q. Zhang, Characterization of an Acetone Detector Based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated With Microheater, IEEE Transactions on Electron Devices, 66 pp. 4373-4379 (2019).
4.H. Tang, Y. Li, R. Sokolovskij, L. Sacco, H. Zheng, H. Ye, H. Yu, X. Fan, H. Tian, T. L. Ren, and G. Q. Zhang, Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction, ACS Applied Materials & Interfaces, 11, (2019).
5.J. Zhang*, R. Sokolovskij*, G. Chen, Y. Zhu, Y. Qi, X. Lin, W. Li, G. Q. Zhang, Y. L. Jiang, and H. Yu, Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection, Sensors and Actuators B: Chemical, 280 pp. 138-143 (2019). (*equal contributors)
6.R. Sokolovskij, J. Zhang, E. Iervolino, C. Zhao, F. Santagata, F. Wang, H. Yu, P. M. Sarro, and G. Q. Zhang, Hydrogen Sulfide Detection Properties of Pt-Gated Al-GaN/GaN HEMT-Sensor, Sensors and Actuators B: Chemical, 274, pp. 636-644, (2018).
7.R. Sokolovskij, P. Liu, H. W. Van Zeijl, B. Mimoun, and G. Q. Zhang, Design and Fabrication of a Foldable 3D Silicon Based Package for Solid State Lighting Applications, Journal of Micromechanics and Microengineering, 25, 055017 (2015).
Conference proceedings
1.R. Sokolovskij, J. Zhang, H. Zheng,W. Li, Y. Jiang, G. Yang, H. Yu1, P.M. Sarro, G.Q. Zhang, Recessed gate Pt-AlGaN/GaN HEMT H2 sensor, in Proc. IEEE Sensors Conf., Montreal, 2019, pp. 1-3.
2.R. Sokolovskij, E. Iervolino, C. Zhao, F. Wang, H. Yu, P.M. Sarro, and G.Q. Zhang, Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hydrogen detection, in Proc. IEEE Sensors Conf., Glasgow, 2017, pp. 1-3.
3.R. Sokolovskij, E. Iervolino, C. Zhao, F. Santagata, F. Wang, H. Yu, P. M. Sarro, and G. Q. Zhang, Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection, in Proc. Eurosensors Conference, Paris, pp. 3–6 (2017).
4.R. Sokolovskij, J. Sun, F. Santagata, E. Iervolino, S. Li, G.Y. Zhang, P.M. Sarro, and G.Q. Zhang, Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching, Procedia Engineering, 168, pp. 1094-1097 (2016).