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Dr. Kwai Hei Li received the B.Eng. and Ph.D. degrees in Electrical and Electronic Engineering from the University of Hong Kong in 2009 and 2013, respectively. After graduation, he received 1-year postdoctoral research training at the McGill University in Canada. He worked as a Research Assistant Professor in the Department of Electrical and Electronic Engineering at HKU from 2016 to 2019. He is now an Assistant Professor at the Southern University of Science and Technology. He has published more than 80 papers in international academic journals and conferences, 1 book and 2 book chapters, and 2 U.S. patent applications. Research results were highlighted in industry magazines such as Compound Semiconductor and Semiconductor Today. He served as local arrangement chair of the 2016 IEEE International Conference on Electronic Devices and Solid State Circuits respectively. Dr. Li has been PI of several research projects, including General Research Funds (GRF) sponsored by the Research Grants Council (RGC) of Hong Kong.
2013 Doctor of Philosophy, The University of Hong Kong
2009 Bachelor of Electrical and Electronic Engineering, The University of Hong Kong
2019-Present Assistant Professor, Southern University of Science and Technology
2016-2019 Research Assistant Professor, The University of Hong Kong
2014-2016 Post-doctoral Fellow, The University of Hong Kong
2013-2014 Post-doctoral Fellow, McGill University
Micro- and Nano-patterning of GaN devices
Design, fabrication and application of GaN-based optoelectronic devices and integration
For more information, please visit the website: http://khli-sustech.sxl.cn.
2015 Springer Theses Award
2014 Award for Outstanding Research Postgraduate Student, University of Hong Kong
2012 Sir Edward Youde Memorial Fellowships for Post-graduate Research Students
GaN monolithic integrated device:
 K. H. Li, W. Y. Fu, and H. W. Choi, “Chip-scale GaN integration,” Progress in Quantum Electronics 70, 200247, (2020).
 K. H. Li, Y. F. Cheung, W. Jin, W. Y. Fu, A. T. L. Lee, S. C. Tan, S. Y. Hui, and H. W. Choi, “InGaN RGB light-emitting diodes with monolithically-integrated photodetectors for stabilizing color chromaticity,” IEEE Transactions on Industrial Electronics 67(6), 5154-5160, (2019).
 K. H. Li, H. Lu, W. Y. Fu, Y. F. Cheung, and H. W. Choi, “Intensity-stabilized LEDs with monolithically integrated photodetectors,” IEEE Transactions on Industrial Electronics 66(9), 7426-7432 (2019).
 K. H. Li, W. Y. Fu, Y. F. Cheung, K. K. Y. Wong, Y. Wang, K. M. Lau, and H. W. Choi, “Monolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate,” Optica 5 (5), 564-569 (2018).
 K. H. Li, Y. F. Cheung, W. Y. Fu, K. K. Y. Wong, and H. W. Choi, “Monolithic integration of GaN-on-sapphire light-emitting diodes, photodetectors, and waveguides,” IEEE Journal of Selected Topics in Quantum Electronics 24(6), 3801706 (2018).
GaN thin-film and flexible device:
 K. H. Li, Y. F. Cheung, and H. W. Choi, “Tunable GaN photonic crystal and microdisk on PDMS flexible films,” ACS Applied Electronic Materials 1(7), 1112-1119, (2019).
 Y. F. Cheung#, K. H. Li#, and H. W. Choi, “Flexible free-standing III-nitride thin films for emitters and displays,” ACS Applied Materials & Interfaces 8 (33), 21440–21445 (2016). (#equally contributing authors)
 K. H. Li, Y. F. Cheung, W. S. Cheung, and H. W. Choi, “Confocal microscopic analysis of optical crosstalk in GaN micro-pixel light-emitting diodes,” Applied Physics Letters 107, 171103 (2015).
 Y. F. Cheung#, K. H. Li#, R. S. Y. Hui, and H. W. Choi, “Observation of enhanced visible and infrared emissions in photonic crystal thin-film light-emitting diodes,” Applied Physics Letters 105, 071104 (2014). (#equally contributing authors)
 K. H. Li, Y. F. Cheung, and H. W. Choi, “Optical and thermal analyses of thin-film hexagonal micro-mesh light-emitting diodes,” IEEE Photonics Technology Letters 25, 374–377 (2013).
GaN micro-/nano-cavity laser:
 K. H. Li, X. Liu, Q. Wang, S. Zhao, and Z. Mi, “Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature,” Nature Nanotechnology 10, 140-144 (2015).
 K. H. Li, Q. Wang, H. P. T. Nguyen, S. Zhao, and Z. Mi, “Polarization-resolved electroluminescence study of InGaN/GaN dot-in-a-wire light-emitting diodes grown by molecular beam epitaxy,” Physica Status Solidi A 212(5), 9941-946 (2015).
 K. H. Li, Y. F. Cheung, and H. W. Choi, “Whispering gallery mode lasing in optically isolated III-nitride nanorings,” Optics Letters 40(11), 2564-2567 (2015).
 K. H. Li, Z. T. Ma, and H. W. Choi, “Single-mode whispering gallery lasing from metalclad GaN nanopillars,” Optics Letters 37, 374 (2012).
 K. H. Li, Z. T. Ma, and H. W. Choi, “High-Q whispering-gallery mode lasing from nanosphere-patterned GaN nanoring arrays,” Applied Physics Letters 98, 071106 (2011).
Micro-/nano-processing of optoelectronic device:
 K. H. Li, Y. F. Cheung, C. W. Tang, C. Zhao, K. M. Lau and H. W. Choi, “Optical crosstalk analysis of micro-pixelated GaN-based light-emitting diodes on sapphire and Si substrates”, Physica Status Solidi A 213 (5), 1193 (2016).
 K. H. Li, C. Feng, and H. W. Choi, “Analysis of micro-lens integrated flip-chip InGaN light-emitting diodes by confocal microscopy,” Applied Physics Letters 104, 051107 (2014).
 K. H. Li, K. Y. Zang, S. J. Chua, and H. W. Choi, “III-nitride light-emitting diode with embedded photonic crystals,” Applied Physics Letters 102, 181117 (2013).
 K. H. Li, Q. Zhang, and H. W. Choi, “1-µm Micro-Lens Array on Flip-Chip Light-Emitting Diode”, Japanese Journal of Applied Physics, 52, 08JH08, (2013).
 K. H. Li, Z. T. Ma, and H. W. Choi, “Tunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography,” Applied Physics Letters 100, 141101 (2012).
 K. H. Li and H. W. Choi, “InGaN light-emitting diodes with indium-tin-oxide photonic crystal current-spreading layer,” Journal of Applied Physics 110, 053104 (2011).
 K. H. Li and H. W. Choi, “Air-spaced GaN nanopillar photonic band gap structures patterned by nanosphere lithography,” Journal of Applied Physics 109, 023107 (2010).