We regret to inform you that the IWJT 2024 has been cancelled due to unforeseen circumstances.

IWJT2024 August 2- 4, 2024 Shenzhen, China 24th International Workshop on Junction Technology Southern University of Science and Technology

The 24th International Workshop on Junction Technology (IWJT2024) will be held on August 2 - 4, 2024 in Shenzhen, China. The IWJT, started in 2000 and was held annually in Japan or China, is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors. At the past IWJTs, a number of eminent and experienced scientists and engineers from Asia, America, and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their new research results, and exchange ideas with leading scientists in this field.

REGISTRATION

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On site registration:

International Conference Hall, Southern University of Science and Technology

09:00-19:00, August 2, 2024

Only cash is acceptable. No payment by bank card is available.

Registration Fee (USD)

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Registration Fee (RMB)

Please click on the attachment below to learn more about the registration fee for the conference.

20240803-Registration_Form_IWJT2024-USD.doc

20240803-Registration_Form_IWJT2024-RMB.doc

Overview Schedule

Call for Papers

Important Dates

Deadline for Camera-Ready Full-Length Paper Submission : June 15, 2024

Notification of Regular Paper Acceptance: June 30, 2024

Deadline for Late News Submission Extended: June 30, 2024mission at web-site

Email submission with a cover letter to iwjt2024@sustech.edu.cn is preferred.

Workshop Scope
(Papers are solicited in, but not limited to the following)

• Doping Technology --- Ion implantation, plasma doping, gas and solid doping

• Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects

• Junction Technology for Novel CMOS Device Structures --- Junction for SOI, strained Si, SiGe, Ge, Schottky barrier S/D MOSFET, FinFET(Tri-gate FET), and bonding junctions

• Silicide and Contact Technology for CMOS --- Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre-treatment

• Junction and Contact Technologies for Compound Semiconductors, 2D Semiconductors and Quantum Devices --- Schottky and ohmic contacts to compound semiconductors, junction and contact technologies for carbon nanotube, graphene, 2D material and other nano-, quantum devices, hetero-junction devices

• Technologies for Wide Band-gap Semiconductor Devices --- Technologies for SiC, GaN, AlN, Ga2O3 and Ultra-Wide Bandgap Semiconductors devices for optoelectronics, power electronics, MEMS, sensors, RF and 5G Mobile Communication

• Contact and Junction Technologies for Energy Harvesting Devices---solar cells

•Characterization for Shallow Junction --- Physical and electrical characterization of ultra-shallow junction

• Modeling and Simulation --- Modeling and simulation of ultra-shallow junction formation of CMOS

• Equipment, Materials and Substrates for Junction Technology

Organized by
Southern University of Science and Technology
IEEE EDS Japan Chapter
Technical Co-Sponsored by
IEEE EDS

Supported by
Southern University of Science and Technology
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PROGRAM

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Mar. 8.2019 (Thur)
Mar. 9.2019 (Fri)

August 3, 08:30-10:30

August 3, 08:30-09:00   Opening
(Sat.)        (International Conference Hall, SouthernUniversity of Science and Technology)
August 3, 09:00-10:30     Plenary Session

10:30-15:15

Coffee Break (10:30-10:45)
August 3,10:45-12:00     Doping Technology
August 3,13:30-15:15    Annealing Technology

15:15-17:30

Coffee Break (15:15-15:30)
August 3,15:30-16:30    Junction Technology for Novel CMOS Device Structures
August 3,16:30-17:30    Silicide and Contact Technology for CMOS

August 3, 08:30-15:45

August 3,08:30-10:00 Junction and Contact Technologies for Compound Semiconductor, 2D Material and Quantum Devices
(Sat.)      (International Conference Hall, SouthernUniversity of Science and Technology)
Coffee Break (10:00-10:15)
August 3,10:15-11:45    Technologies for Wide Band-gap Semiconductor Devices
August 3, 13:30-15:45 Contact and Junction Technologies for Energy Harvesting Devices

15:45-18:00

Coffee Break (15:45-16:00)
August 3, 16:00-15:45 Characterization for Shallow Junction
August 3, 15:45-16:45 Equipment, Materials and Substrates for Junction Technolog
August 3, 16:45-18:00   Modeling and Simulation
More content, please look forward to ...

Coffee Break (10:30-10:45)

08:30-09:00: Characterization for Shallow Junction

Room 102, 1st floor, East Auxiliary Building Affiliated to Guanghua Building

Chair:Kyoichi Suguro, Toshiba, Japan
Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique
Kazuo Tsutsui1, Tomohiro Matsushita2, Takayuki Muro2, Yoshitada Morikawa3, Kotaro Natori4, Takuya Hoshii4, Kuniyuki Kakushima4, Hitoshi Wakabayashi4, Kouichi Hayashi5, Fumihiko Matsui6, and Toyohiko Kinoshita2 1Institute of Innovative Research, Tokyo Institute of Technology, Japan; 2 Japan Synchrotron Radiation Research Institute (JASRI), Japan; 3 Osaka University, Japan; 4School of Engineering, Tokyo Institute of Technology, Japan; 5Nagoya Institute of Technology, Japan; 6 Nara Institute of Science and Technology, Japan

Chair:Kyoichi Suguro, Toshiba, Japan
Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique
Kazuo Tsutsui1, Tomohiro Matsushita2, Takayuki Muro2, Yoshitada Morikawa3, Kotaro Natori4, Takuya Hoshii4, Kuniyuki Kakushima4, Hitoshi Wakabayashi4, Kouichi Hayashi5, Fumihiko Matsui6, and Toyohiko Kinoshita2 1Institute of Innovative Research, Tokyo Institute of Technology, Japan; 2 Japan Synchrotron Radiation Research Institute (JASRI), Japan; 3 Osaka University, Japan; 4School of Engineering, Tokyo Institute of Technology, Japan; 5Nagoya Institute of Technology, Japan; 6 Nara Institute of Science and Technology, Japan

08:30-09:00: Characterization for Shallow Junction

Room 102, 1st floor, East Auxiliary Building Affiliated to Guanghua Building

Chair:Kyoichi Suguro, Toshiba, Japan
Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique
Kazuo Tsutsui1, Tomohiro Matsushita2, Takayuki Muro2, Yoshitada Morikawa3, Kotaro Natori4, Takuya Hoshii4, Kuniyuki Kakushima4, Hitoshi Wakabayashi4, Kouichi Hayashi5, Fumihiko Matsui6, and Toyohiko Kinoshita2 1Institute of Innovative Research, Tokyo Institute of Technology, Japan; 2 Japan Synchrotron Radiation Research Institute (JASRI), Japan; 3 Osaka University, Japan; 4School of Engineering, Tokyo Institute of Technology, Japan; 5Nagoya Institute of Technology, Japan; 6 Nara Institute of Science and Technology, Japan

Chair:Kyoichi Suguro, Toshiba, Japan
Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique
Kazuo Tsutsui1, Tomohiro Matsushita2, Takayuki Muro2, Yoshitada Morikawa3, Kotaro Natori4, Takuya Hoshii4, Kuniyuki Kakushima4, Hitoshi Wakabayashi4, Kouichi Hayashi5, Fumihiko Matsui6, and Toyohiko Kinoshita2 1Institute of Innovative Research, Tokyo Institute of Technology, Japan; 2 Japan Synchrotron Radiation Research Institute (JASRI), Japan; 3 Osaka University, Japan; 4School of Engineering, Tokyo Institute of Technology, Japan; 5Nagoya Institute of Technology, Japan; 6 Nara Institute of Science and Technology, Japan

We regret to inform you that the IWJT 2024 has been cancelled due to unforeseen circumstances.

IWJT2024 August 2- 4, 2024 Shenzhen, China 24th International Workshop on Junction Technology Southern University of Science and Technology

REGISTRATION

Call for Papers

PROGRAM

Coffee Break (10:30-10:45)

Characterization for Shallow Junction

Characterization for Shallow Junction

IMPORTANTDATES

Workshop Scope

Doping Technology

Annealing Technology

Junction Technology for Novel CMOS Device Structures

Silicide and Contact Technology for CMOS

Junction and Contact Technologies for Compound Semiconductors

Technologies for Wide Band-gap Semiconductor Devices

Contact and Junction Technologies for Energy Harvesting Devices

Characterization for Shallow Junction

Modeling and Simulation

Equipment, Materials and Substrates for Junction Technology

IMPORTANT
DATES