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IWJT2020 May 9- 10, 2020 Shenzhen, China 20th International Workshop on Junction Technology Southern University of Science and Technology

The 20th International Workshop on Junction Technology (IWJT2020) will be held on May 9 - 10, 2020 in Shenzhen, China. The IWJT, started in 2000 and was held annually in Japan or China, is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors. At the past IWJTs, a number of eminent and experienced scientists and engineers from Asia, America, and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their new research results, and exchange ideas with leading scientists in this field.

REGISTRA
TION

On site registration:

Lecture Hall, Faculty Research Building 1, Southern University of Science and Technology

08:00-11:30, May 9, 2020

08:00-11:30, May 10, 2020

Only cash is acceptable. No payment by bank card is available.



Call for Papers



Important Dates

Deadline for Camera-Ready Full-Length Paper Submission Mar. 15, 2020

Notification of Regular Paper Acceptance: Mar. 31, 2020

Deadline for Late News Submission ExtendedMar. 31, 2020mission at web-site

Email submission with a cover letter to iwjt2020@sustech.edu.cn is preferred.

 

Workshop Scope
(Papers are solicited in, but not limited to the following)

Doping Technology --- Ion implantation, plasma doping, gas and solid doping

Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects

Junction Technology for Novel CMOS Device Structures --- Junction for SOI, strained Si, SiGe, Ge, Schottky barrier S/D MOSFET, FinFET(Tri-gate FET), and bonding junctions

Silicide and Contact Technology for CMOS --- Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre-treatment

Junction and Contact Technologies for Compound Semiconductors,  2D Semiconductors and Quantum Devices --- Schottky and ohmic contacts to compound semiconductors, junction and contact technologies for carbon nanotube, graphene, 2D material and other nano-, quantum devices, hetero-junction devices

Technologies for Wide Band-gap Semiconductor Devices --- Technologies for SiC, GaN, AlN, Ga2O3 and Ultra-Wide Bandgap Semiconductors devices for optoelectronics, power electronics, MEMS, sensors, RF and 5G Mobile Communication

Contact and Junction Technologies for Energy Harvesting Devices---solar cells

• Characterization for Shallow Junction --- Physical and electrical characterization of ultra-shallow junction

Modeling and Simulation --- Modeling and simulation of ultra-shallow junction formation of CMOS

Equipment, Materials and Substrates for Junction Technology


 

 

Organized by
Southern University of Science and Technology
IEEE EDS Japan Chapter
Technical Co-Sponsored by
IEEE EDS

Supported by
Southern University of Science and Technology
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IMPORTANT
DATES

Deadline for Camera-Ready Full-Length Paper Submission : Mar. 15, 2020

Notification of Regular Paper Acceptance: Mar. 31, 2020

Deadline for Late News Submission: Mar. 31, 2020

Email submission with a cover letter to iwjt2020@sustech.edu.cn is preferred.


Organized by Southern University of Science and Technology

Technical Co-Sponsored by IEEE EDS

Supported by Southern University of Science and Technology