微电子首页

综合新闻

当前位置 :首页>新闻动态

Welcome to IWJT2020

2019-11-18综合新闻

主图.png

IWJT2020 May 9-10, 2020 Shenzhen,

20th International Workshop on Junction Technology

Southern University of Science and Technology


Shenzhen, China
May 9 –10, 2020

https://sme.sustech.edu.cn/index/huiyi/index 

The 20th International Workshop on Junction Technology (IWJT2020) will be held on May 9 - 10, 2020 in Shenzhen, China. The IWJT, started in 2000 and was held annually in Japan or China, is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors. The main focus of IWJT2020 is on junction technologies for nanometer CMOS devices, compound semiconductors, wide-bandgap semiconductors and two-dimensional semiconductors. The workshop will provide a good opportunity for researchers and engineers to present their new research results, and exchange ideas with leading scientists in this field. Welcome to IWJT2020! For more information about IWJT2020, visit the website at: https://sme.sustech.edu.cn/index/huiyi/index


 WORKSHOP SCOPE
(Papers are solicited in, but not limited to the following)

 Doping Technology --- Ion implantation, plasma doping, gas and solid doping

 Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects

 Junction Technology for Novel CMOS Device Structures --- Junction for SOI, strained Si, SiGe, Ge, Schottky barrier S/D MOSFET, FinFET(Tri-gate FET), and bonding junctions

 Silicide and Contact Technology for CMOS --- Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre-treatment

 Junction and Contact Technologies for Compound Semiconductors,  2D Semiconductors and Quantum Devices --- Schottky and ohmic contacts to compound semiconductors, junction and contact technologies for carbon nanotube, graphene, 2D material and other nano-, quantum devices, hetero-junction devices

 Technologies for Wide Band-gap Semiconductor Devices --- Technologies for SiC, GaN, AlN, Ga2O3 and Ultra-Wide Bandgap Semiconductors devices for optoelectronics, power electronics, MEMS, sensors, RF and 5G Mobile Communication

Contact and Junction Technologies for Energy Harvesting Devices---solar cells  

Characterization for Shallow Junction --- Physical and electrical characterization of ultra-shallow junction

Modeling and Simulation --- Modeling and simulation of ultra-shallow junction formation of CMOS

Equipment, Materials and Substrates for Junction Technology

 

 

 

CONFERENCE SCHEDULE

The tentative schedule for the IWJT2020 will be:

Saturday, May 9

8:30 AM – 9 AM Opening

9:00 AM – 5:30 PM Conference Presentations

Sunday, May 10

8:30 – 11:15 AM Conference Presentations

1:30 – 6: 00 PM Conference Presentations

 

 

MORE INFORMATION

 

Prof. Huaiyu YE
 

School of Microelectronics

Southern University of Science and Technology, Shenzhen 518055, China

 

E-mail:  yehy@sustech.edu.cn

Tel: +86-755-88015743


Please scan the following code to enroll:


金数据-IWJT2020线上报名.png


IWJT2020海报-定稿 - 副本.png


相关内容

  • 综合新闻
  • 科研新闻
  • 通知公告
  • 学术讲座